isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 16 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3729 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 0.5 mA hFE DC Current Gain IC= 1A; VCE= 5V isc Website：www.iscsemi.cn CONDITIONS MIN MAX UNIT 800 V 6 V B B 2 TYP. 8