isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1635 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A Collector Power Dissipation @ TC=25℃ 30 PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 2 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4008 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μA hFE DC Current Gain IC= 1A ; VCE= 4V Current-Gain—Bandwidth Product IE= -0.2A ; VCE= 12V 10 MHz Output Capacitance IE=0 ; VCB= 10V; ftest= 1MHz 60 pF fT COB B B hFE classifications E F G 100-200 160-320 250-500 isc Website：www.iscsemi.cn 2 100 500