isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VALUE UNIT -160 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A Collector Power Dissipation @ TC=25℃ 120 w -160 PC TJ Tstg V W Collector Power Dissipation @ Ta=25℃ 3.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1347 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -2.0 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain COB Output Capacitance fT PARAMETER B n c . i m e s c s i . w IC= -8A; VCE= -5V w w Current-Gain—Bandwidth Product S P 60-120 80-160 100-200 isc Website：www.iscsemi.cn 60 200 20 IE= 0; VCB= -10V; f= 1.0MHz 400 pF IC= -0.5A; VCE= -5V 15 MHz hFE-2 Classifications Q 20 2