ISC 2SD2027

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2027
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SB1346
APPLICATIONS
·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
8
A
Collector Power Dissipation
@Ta=25℃
1.75
W
PC
Collector Power Dissipation
@TC=25℃
30
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2027
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
1.0
V
ICBO
Collector Cutoff Current
VCB= 40V; IE=0
100
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC=0
100
μA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
70
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
20
COB
Output Capacitance
IE= 0; VCB= 10V, f= 1MHz
60
pF
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 5V
8
MHz
fT
‹
CONDITIONS
R
S
70-140
100-200
140-280
isc Website:www.iscsemi.cn
TYP.
B
hFE-1 Classifications
Q
MIN
2
MAX
UNIT
280