Inchange Semiconductor Product Specification 2SC4303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switchihg transistor APPLICATIONS ・Switching Regulator, ・Lighting Inverter and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 6 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4303 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.5A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=2.5A ; VCE=4V Transition frequency IE=0.5A ; VCE=12V fT CONDITIONS 2 MIN TYP. MAX UNIT 6 4 MHz Inchange Semiconductor Product Specification 2SC4303 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3