ISC 2SD1194

Inchange Semiconductor
Product Specification
2SD1194
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SB884
・High DC current gain.
・High current capacity and wide ASO.
・Low saturation voltage
・DARLINGTON
APPLICATIONS
・Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
110
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
3
A
ICM
Collector current-peak
5
A
PC
Collector power dissipation
Ta=25℃
1.75
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1194
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=5mA ; IE=0
110
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;RBE=∞
100
V
VCEsat
Collector-emitter saturation voltage
IC=1.5A, IB=3mA
VBEsat
Base-emitter saturation voltage
ICBO
1.5
V
IC=1.5A, IB=3mA
2.0
V
Collector cut-offcurrent
VCB=80V;IE=0
0.1
mA
IEBO
Emitter cut-offcurrent
VEB=5V;IC=0
3.0
mA
hFE
DC current gain
IC=1.5A ; VCE=3V
Transition frequency
IC=1.5A ; VCE=5V
fT
0.9
1500
20
MHz
0.7
μs
5.0
μs
1.2
μs
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=500IB1=-500IB2=1A
VCC=50V;RL=50Ω
Fall time
2
Inchange Semiconductor
Product Specification
2SD1194
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3