ISC 2SB1165

Inchange Semiconductor
Product Specification
2SB1165
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SD1722
・Low collector saturation voltage
・Fast switching time
APPLICATIONS
・For use in relay drivers,high-speed
inverters,converters.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-8
A
PC
Collector power dissipation
Ta=25℃
1.2
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1165
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;RBE=∞
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-10μA ;IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA ;IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.15A
-0.28
-0.55
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.15A
-0.95
-1.3
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
70
hFE-2
DC current gain
IC=-4A ; VCE=-2V
35
Transition frequency
IC=-1A ; VCE=-5V
130
MHz
Collector output capacitance
IE=0; f=1MHz ; VCB=-10V
60
pF
50
ns
450
ns
20
ns
fT
COB
CONDITIONS
MIN
TYP.
MAX
UNIT
400
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=-2A; IB1=-IB2=-0.2A
VCC=25V
Fall time
hFE-1 Classifications
Q
R
S
T
70-140
100-200
140-280
200-400
2
Inchange Semiconductor
Product Specification
2SB1165
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3