Inchange Semiconductor Product Specification BUH1015HI Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package. ・High voltage. ・High switching speed. APPLICATIONS ・Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Open emitter D N O IC M E S GE N A H INC Emitter-base voltage CONDITIONS Open base Open collector Collector current (DC) tp<5ms VALUE UNIT 1500 V 700 V 10 V 14 A 18 A 8 A ICM Collector current -peak IB Base current IBM Base current -peak tp<5ms 11 A PC Collector power dissipation TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BUH1015HI Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICES Collector cut-off current VCE=1500V ;VBE=0 Tj=125℃ 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain 导体 半 电 固 IC=10A ; VCE=5V Tj=100℃ tf M E S GE Storage time R O T UC 1.5 μs 110 ns IC=10A;IB1=2A;IB2=-6A; VCC=400V N A H INC Fall time 14 D N O IC Switching times resistive load ts 7 5 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case 2 MAX UNIT 1.8 ℃/W Inchange Semiconductor Product Specification BUH1015HI Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3