isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJF44H11 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 8A ·Fast Switching Speeds ·Complement to Type MJF45H11 APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A Collector Power Dissipation @TC=25℃ 36 Collector Power Dissipation @Ta=25℃ 2 PC Tj Tstg W 150 ℃ -55~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJF44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4 A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 2A ; VCE= 1V 60 hFE-2 DC Current Gain IC= 4A ; VCE= 1V 40 COB Output Capacitance VCB= 10V, f= 0.1MHz 130 pF Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; ftest=20MHz 50 MHz IC= 5A; IB1= 0.5A 0.3 μs 0.5 μs 0.14 μs fT CONDITIONS MIN TYP MAX 80 UNIT V Switching Times ton Turn-On Time ts Storage Time IC= 5A; IB1= -IB2= 0.5A tf Fall Time isc Website：www.iscsemi.cn