isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@IC= 10A ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE 2N5885 60 2N5886 80 UNIT n c . i m e Collector-Base Voltage V s c s i . w Collector-Emitter Voltage 2N5885 60 2N5886 80 w w Emitter-Base Voltage 5 V V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ MAX UNIT 0.875 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5885/5886 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN 2N5885 Collector-Emitter Sustaining Voltage MAX UNIT 60 IC= 200mA ; IB= 0 2N5886 V 80 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A 4.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 25A; IB= 6.25A 2.5 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V 1.5 V ICEO ICEX ICBO Collector Cutoff Current 2.0 2N5886 VCE= 40V; IB= 0 2.0 2N5886 2N5885 2N5886 mA s c s .i ww w Collector Cutoff Current VCE= 30V; IB= 0 2N5885 Collector Cutoff Current n c . i m e 2N5885 VCE= 60V; VBE(off)= 1.5V VCE= 60V; VBE(off)= 1.5V,TC=150℃ 1.0 10 VCE= 80V; VBE(off)= 1.5V VCE= 80V; VBE(off)= 1.5V,TC=150℃ 1.0 10 VCB= 60V; IE= 0 1.0 VCB= 80V; IE= 0 1.0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 3A ; VCE= 4V 35 hFE-2 DC Current Gain IC= 10A ; VCE= 4V 20 hFE-3 DC Current Gain IC= 25A ; VCE= 4V 4 COB Output Capacitance IE= 0;VCB= 10V;ftest= 1MHz Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 1MHz fT mA mA 100 500 4 pF MHz Switching Times tr tstg tf Rise Time Storage Time IC= 10A; IB1= -IB2= 1A;VCC= 30V Fall Time isc Website：www.iscsemi.cn 2 0.7 μs 1.0 μs 0.8 μs