JMNIC 2SA887

JMnic
Product Specification
2SA887
Silicon PNP Power Transistors
DESCRIPTION
・With TO-202 package
・Complement to type 2SC1848
APPLICATIONS
・Medium power amplifier
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-70
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-2
A
ICM
Collector current-peak
-3
A
PC
Collector power dissipation
Ta=25℃
1.2
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SA887
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-70
V
VCEsat
Collector-emitter saturation voltage
IC=-1A ;IB=-0.1A
-0.6
-1.2
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2 A
-1.0
-1.5
V
hFE-1
DC current gain
IC=-100mA ; VCE=-5V
30
hFE-2
DC current gain
IC=-1A ; VCE=-5V
50
ICBO
Collector cut-off current
VCB=-40V; IE=0
-1.0
μA
ICEO
Collector cut-off current
VCE=-20V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
fT
Transition frequency
IE=0.5A ; VCB=-5V
‹ hFE-2 Classifications
P
Q
R
50-100
80-160
120-220
2
MIN
TYP.
MAX
UNIT
220
150
MHz
JMnic
Product Specification
2SA887
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3