KEXIN BSS63R

Transistors
SMD Type
High Voltage Transistor
BSS63R
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
SOT23 PNP silicon planar
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-110
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-6
V
IC
-100
mA
Ptot
330
mW
Tj,Tstg
-55 to +150
Continuous collector current
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-10ìA
-110
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=-100ìA
-100
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10ìA
-6
Collector-base cut-off current
ICBO
VCB=-90V
VCB=-90V,Ta = 150
Emitter-base current
IEBO
VEB=-6V
V
-100
-50
nA
ìA
-200
nA
Collector-emitter saturation voltage
VCE(sat) IC=-25mA, IB=-2.5mA
-250
V
Base-emitter saturation voltage
VBE(sat) IC=-25mA, IB=-2.5mA
-900
V
DC current gain
hFE
Transitional frequency
fT
Output capacitance
Cobo
* Pulse test: tp = 300 ìs; d
IC=-10mA,VCE=-1V
IC=-25mA,VCE=-1V
30
30
IC=25mA, VCE=-5V, f=35MHz
50
VCB=-10V, f=1MHz
85
MHz
3
pF
0.02.
Marking
Marking
T6
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