KEXIN FZT788B

Transistors
SMD Type
PNP Silicon Planar Medium
Power High Gain Transistor
FZT788B
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Features
Low equivalent on-resistance; RCE(sat) 93mÙ at 3A.
+0.1
3.00-0.1
Gain of 300 at IC=2 Amps and Very low saturation voltage.
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-15
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-5
V
ICM
-8
A
Peak pulse current
IC
-3
A
Power dissipation
Ptot
2
W
Tj,Tstg
-55 to +150
Continuous collector current
Operating and storage temperature range
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1
Transistors
SMD Type
FZT788B
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-15
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-15
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
V
Collector-base cut-off current
ICBO
VCB=-10V
-0.1
ìA
Emitter Cut-Off Current
IEBO
VEB=-4V
-0.1
ìA
IC=-0.5A, IB=-2.5mA
IC=-1A, IB=-5mA
IC=-2A, IB=-10mA
IC=-3A, IB=-50mA
-0.15
-0.25
-0.45
-0.5
V
-0.9
V
Collector-emitter saturation voltage *
VCE(sat)
Base-emitter saturation voltage *
VBE(sat) IC=-1A, IB=-5mA
Base-emitter ON voltage *
VBE(on) IC=-1A, VCE=-2V
Static Forward Current Transfer Ratio
Transitional frequency
hFE
fT
-0.75
IC=-10mA,VCE=-2V *
500
IC=-1A, VCE=-2V*
400
IC=-2A, VCE=-2V*
300
IC=-6A, VCE=-2V*
150
IC=-50mA, VCE=-5V, f=50MHz
100
V
1500
MHz
Input capacitance
Cibo
VEB=-0.5V, f=1MHz
225
pF
Output capacitance
Cobo
VCB=-10V, f=1MHz
25
pF
Turn-on time
t(on)
IC=-500mA, VCC=-10V
35
ns
t(off)
IB1=IB2=-50mA
400
ns
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
2
Testconditons
FZT788B
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