NTE NTE37

NTE36 (NPN) & NTE37 (PNP)
Silicon Complementary Transistors
AF Power Amplifier, High Current Switch
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICEO
VCB = 80V, IE = 0
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VBE = 4V, IC = 0
–
–
0.1
mA
DC Current Gain
hFE1
VCE = 5V, IC = 1A
60
–
200
hFE2
VCE = 5V, IC = 6A
20
–
–
fT
VCE = 5V, IC = 1A
–
15
–
–
–
210
300
–
–
–
–
1.5
–
–
0.6
1.1
2.5
–
Gain Bandwidth Product
Output Capacitance
NTE36
NTE37
Cob
Base–Emitter Voltage
VBE
Collector–Emitter Saturation Voltage
NTE36
NTE37
VCE(sat)
VCB = 10V, f = 1MHz
VCE = 5V, IC = 1A
MHz
pF
IC = 5A, IB = 500mA
V
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 5mA, IE = 0
160
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 5mA, RBE = ∞
140
–
–
V
140
–
–
V
6
–
–
V
–
–
0.26
0.25
–
–
–
–
0.68
0.53
–
–
–
–
6.88
1.61
–
–
IC = 50mA, RBE = ∞
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 5mA, IC = 0
Turn–On Time
NTE36
NTE37
ton
Fall Time
NTE36
NTE37
µs
10IB1 = –10IB2 = IC = 1A,
PW = 20µs
µs
tf
Storage Time
NTE36
NTE37
µs
ton
Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
.190 (4.82)
.787
(20.0)
.615 (15.62)
.670 (17.0)
Max
OR
.197 (5.0)
.866
(22.0)
.217
(5.5)
(Note)
.591
(15.02)
.126
(3.22)
Dia
B
.590
(15.0)
.130 (3.3)
Dia
C
E
.177 (4.5)
.747
(19.0)
Min
.787
(20.0)
B
C
E
.215 (5.47)
NOTE: Either case style may be shipped depending on stock.
.215 (5.47)
.025 (0.65)