NTE NTE159

NTE159
Silicon PNP Transistor
Audio Amplifier, Switch
(Compl to NTE123AP)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction to Case, RθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction to Ambient, RθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0
80
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
80
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
–
–
V
VCB = 50V, IE = 0
–
–
50
nA
VCB = 50V, IE = 0, TA = +75°C
–
–
5
µA
–
–
100
nA
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 10V, IC = 0.1mA
25
–
–
VCE = 10V, IC = 1mA
40
–
–
VCE = 10V, IC = 10mA
50
–
250
VCE = 10V, IC = 100mA
40
–
–
VCE = 10V, IC = 500mA
30
–
–
IC = 150mA, IB = 15mA, Note 2
–
–
0.15
V
IC = 500mA, IB = 50mA, Note 2
–
–
0.5
V
IC = 150mA, IB = 15mA, Note 2
–
–
0.9
V
IC = 500mA, IB = 50mA, Note 2
–
–
1.1
V
IC = 500mA, VCE = 500mV
–
–
1.1
V
100
–
500
MHz
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
hFE
VCE(sat)
VBE(sat)
VBE(on)
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
IC = 50mA, VCE = 10V, f = 100MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 100kHz
–
–
30
pF
Input Capacitance
Cib
VCB = 10V, IE = 0, f = 100kHz
–
–
110
pF
Input Impedance
hie
IC = 10mA, VCE = 10V, f = 1kHz
–
550
–
kΩ
Voltage Feedback Ratio
hre
IC = 10mA, VCE = 10V, f = 1kHz
–
100
–
x 10–6
Small–Signal Current Gain
hfe
IC = 10mA, VCE = 10V, f = 1kHz
–
200
–
Output Admittance
hoe
IC = 10mA, VCE = 10V, f = 1kHz
–
100
–
µmhos
Noise Figure
NF
IC = 100µA, VCE = 10V, RS = 1kΩ,
f = 1kHz
–
–
3
dB
Turn–On Time
ton
VCC = 30V, VBE(off) = 3.8V,
IC = 500mA, IB1 = 50mA
–
–
100
ns
Turn–Off Time
toff
VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
–
–
400
ns
Switching Characteristics
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max