D882 TRANSISTOR ( NPN ) TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PD Total Device Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA ,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 10 mA , IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100 mA ,IC=0 6 V Collector cut-off current ICBO VCB=40 V , IE=0 1 uA Collector cut-off current ICEO VCE=30 V , IB=0 10 uA Emitter cut-off current IEBO VEB=6V , 1 uA hFE(1) VCE= 2V, IC= 1A 60 hFE(2) VCE=2V, IC= 100mA 32 Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.2A 1.5 V IC=0 400 DC current gain VCE=5 V, fT Transition frequency IC=0.1mA 50 f = 10MHz MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 Web Site: WWW.PS-PFS.COM D882 TRANSISTOR ( NPN ) Rank R O Y GR Range 60-120 100-200 160-320 200-400 Web Site: WWW.PS-PFS.COM