SAVANTIC MJE15031

SavantIC Semiconductor
Product Specification
MJE15031
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type MJE150230
·High transition frequency
·DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC =- 3.0 Adc
hFE = 20 (Min) @ IC = -4.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-8
A
ICM
Collector current-Peak
-16
A
IB
Base current
-2
A
PD
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
Ta=25
2
TC=25
50
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance ; junction to case
2.5
/W
Rth j-A
Thermal resistance , junction to ambient
62.5
/W
SavantIC Semiconductor
Product Specification
MJE15031
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-1A ;IB=-0.1A
-0.5
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-10
µA
ICEO
Collector cut-off current
VCE=-150V; IB=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
40
hFE-2
DC current gain
IC=-2A ; VCE=-2V
40
hFE-3
DC current gain
IC=-3A ; VCE=-2V
40
hFE-4
DC current gain
IC=-4A ; VCE=-2V
20
Transition frequency
IC=-0.5A;VCE=-10V;f=10MHz
30
fT
CONDITIONS
2
MIN
TYP.
MAX
-150
UNIT
V
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
MJE15031
SavantIC Semiconductor
Product Specification
MJE15031
Silicon PNP Power Transistors
4