C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 C B Top View 1 1 K Collector 2 E 2 3 MARKING: HF D F 1 Base REF. 2 A B C D E F Emitter H G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation Pc 200 mW TJ, TSTG 150, -55 ~ 150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage PARAMETER V(BR)CBO 60 - - V Collector to Emitter Breakdown Voltage TEST CONDITION IC=100µA, IE = 0A V(BR)CEO 50 - - V IC=0.1mA, IB = 0A Collector Cut-Off Current ICBO - - 0.1 µA VCB=60 V, IE = 0 A Collector Cut-Off Current ICEO Emitter Cut-Off Current IEBO - - DC Current Gain 0.1 µA VCE=50 V, IB = 0 A 0.1 µA VEB=5 V, IC = 0 A V IC=100mA, IB=10mA IC=100mA, IB=10mA hFE 130 - 400 Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 Base to Emitter Saturation Voltage VBE(sat) - - 1 V fT 80 - - MHz Transition Frequency VCE=6V, IC=2mA VCE = 10V, IC = 1 mA, f = 30 MHz CLASSIFICATION OF hFE Rank Range http://www.SeCoSGmbH.com/ 31-Dec-2009 Rev. A L H 130-200 200-400 Any changes of specification will not be informed individually. Page 1 of 2 C1815 Elektronische Bauelemente 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 2 of 2