MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES DUAL TRANSISTOR (NPN+PNP) Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP) A E L B MARKING : KNM F C J K DG H EQUIVALENT CIRCUIT REF. A B C D E F Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. E1, B1, C1 = PNP 5401 E2, B2, C2 = NPN 5551 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C PARAMETER SYMBOL NPN RATINGS PNP RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance. Junction to Ambient Air Junction & Storage temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 180 160 6 0.2 0.2 -160 -150 -5 -0.2 0.2 V V V A W °C/W °C http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B 625 150, -55~150 Any changes of specification will not be informed individually. Page 1 of 4 MMDT5451 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) Elektronische Bauelemente NPN5551 ELECTRICAL CHARACTERISTICS at Ta = 25°C PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Noise Figure SYMBOL MIN. MAX. UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT COB 180 160 6 80 80 30 100 - 0.05 0.05 250 0.15 0.2 1 1 300 6.0 V V V µA µA V V V V MHz pF NF - 8.0 dB TEST CONDITIONS IC=100µA,IE=0 IC=1mA,IB=0 IE=10µA,IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V,IC=1mA VCE=5V,IC=10mA VCE=5V,IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE = 10V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz, IE = 0 VCE= 5.0V, IC = 200µA, RS = 1.0kΩ,f = 1.0kHz PNP5401 ELECTRICAL CHARACTERISTICS at Ta = 25°C PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Noise Figure http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B SYMBOL MIN. MAX. UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT COB -160 -150 -5 50 60 50 100 - -50 -50 240 -0.2 -0.5 -1 -1 300 6.0 V V V nA nA V V V V MHz pF NF - 8.0 dB TEST CONDITIONS IC=-100µA,IE=0 IC=-1mA,IB=0 IE=-10µA,IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V,IC=-1mA VCE=-5V,IC=-10mA VCE=-5V,IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE = -10V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz, IE = 0 VCE= -5.0V, IC = -200µA, RS = 10 Ω, f = 1.0kHz Any changes of specification will not be informed individually. Page 2 of 4 MMDT5451 Elektronische Bauelemente 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 MMDT5451 Elektronische Bauelemente 0.2 W, 200 mA, 180 V Plastic-Encapsulated Transistor (Dual) CHARACTERISTIC CURVES (cont’d) http://www.SeCoSGmbH.com/ 28-Oct-2009 Rev. B Any changes of specification will not be informed individually. Page 4 of 4