SSG4520H N-Ch: 6.6 A, 20 V, RDS(ON) 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones B L D M A C FEATURES N Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology J H G Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. REF. A B C D E F G PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 N-CH P-CH Unit VDS 20 -20 V VGS ±8 ±8 V ID @ TA = 25°C 6.6 -5.2 A ID @ TA = 70°C 5.5 -4.2 A IDM 20 -20 A Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 SYMBOL IS 1.3 -1.3 A PD @ TA = 25°C 3.1 3.1 W PD @ TA = 70°C 1.3 1.3 Operating Junction & Storage Temperature Range TJ, TSTG W -55 ~ 150 °C 40 °C / W 110 °C / W Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦ 10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 6 SSG4520H N-Ch: 6.6 A, 20 V, RDS(ON) 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate Threshold Voltage Symbol Ch Min. N P N P N P N P N P 0.4 0 20 -20 - N P N P N P - VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 N RDS(ON) P Forward Transconductance 1 gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Typ. Static 25 10 Dynamic 2 6.3 10 0.9 2.2 1.9 1.7 Max. ±100 ±100 1 -1 47 55 79 110 - Unit V nA μA A mΩ S nC Teat Conditions VDS= VGS, ID= 250μA VDS= VGS, ID= -250μA VDS= 0V, VGS= 12V VDS= 0V, VGS= -12V VDS= 24V, VGS= 0V VDS= -24V, VGS= 0V VDS= 5V, VGS= 4.5V VDS= -5V, VGS= -4.5V VGS= 4.5V, ID= 6.6A VGS= 2.5V, ID= 6.2A VGS= -4.5V, ID= -5.2A VGS= -2.5V, ID= -4.4A VDS= 15V, ID= 6.6A VDS= -15V, ID= -5.2A N-Channel ID= 6.6A, VDS= 15V, VGS= 4.5V P-Channel ID= -5.2A, VDS= -15V, VGS= -4.5V Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) Tr Td(off) Tf N P N P N P N P - 7.4 7.6 4 6.8 22.2 33.6 3.6 23.2 - nS N-Channel VDD= 15V, VGS= 4.5V ID= 1A, RGEN= 6Ω P-Channel VDD= -15V, VGS= -4.5V ID= -1A, RGEN= 6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6 A, 20 V, RDS(ON) 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6 A, 20 V, RDS(ON) 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6 A, 20 V, RDS(ON) 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 5 of 6 SSG4520H Elektronische Bauelemente N-Ch: 6.6 A, 20 V, RDS(ON) 47 m P-Ch: -5.2 A, -20 V, RDS(ON) 79 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 6 of 6