STT3455
-4.0A, -30V,RDS(ON) 100mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT3455 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT3455 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D
D
D
S
6
5
4
REF.
3455
A
A1
A2
c
D
E
E1
Date Code
G
S
1
2
3
D
D
G
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Symbo l
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
-30
V
VGS
±20
V
Continuous Drain Current
3
ID@TA=25
-4.0
A
Continuous Drain Current
3
ID@TA=70
-3.3
A
IDM
-20
A
PD@TA=25
2.0
W
0.016
W/ C
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
o
o
-55~+150
C
Thermal Data
Parameter
Symbol
3
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
STT3455
-4.0A, -30V,RDS(ON) 100mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Symbol
Min.
BVDSS
-30
BVDS/ Tj
VGS(th)
Gate Threshold Voltage
IGSS
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=25 C)
o
Drain-Source Leakage Current (Tj=55 C)
Static Drain-Source On-Resistance
Total Gate Charge
2
IDSS
RDS(ON)
Qg
2
Gate-Source Charge
Qgs
Gate-Drain ("Miller") Charge
Turn-on Delay Time 2
Qgd
Td(ON)
Rise Time
Turn-off Delay Time
Fall Time
-0.02
_
V/ C
-3.0
V
VDS=VGS, ID=-250uA
±100
nA
VGS=± 20V
-1
uA
VDS=-30V,VGS=0
-25
uA
VDS=-24V,VGS=0
_
_
_
_
_
_
_
_
_
_
_
_
_
5.5
1
2.6
7
6
Td(Off)
_
18
Coss
Reverse Transfer Capacitance
Crss
Forward Transconductance
Gfs
_
_
_
_
_
Test Condition
V
_
_
Unit
_
_
Ciss
Output Capacitance
-1.0
Max.
_
Tr
Tf
Input Capacitance
_
Typ.
4
400
90
30
6
100
o
mΩ
8.8
nC
_
_
nS
VGS=-10V
RG=3.3Ω
RD=15 Ω
640
pF
VGS=0V
VDS=-25V
S
VDS=-5V, ID=-4.0A
_
_
ID=-4.0A
VDS=-24V
VGS=-4.5V
ID=-1A
_
_
VGS=-10V, ID=-3.5A
VDD=-15V
_
_
o
Reference to 25 C,ID=-1mA
VGS=-4.5V, ID=-2.7A
170
_
VGS=0V, ID=-250uA
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Symbol
VDS
2
Reverse Recovery Charge
Trr
Qrr
Min.
_
_
_
Typ.
_
21
14
Max.
-1.2
_
_
Unit
V
Test Condition
IS=-1.6A, VGS=0V.
nS
Is=-4.0A, VGS=0V
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.P uls e width≦300us , dutycycle≦2%.
O
3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
STT3455
Elektronische Bauelemente
-4.0A, -30V,RDS(ON) 100mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
STT3455
Elektronische Bauelemente
-4.0A, -30V,RDS(ON) 100mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4