N-CHANNEL POWER MOSFET IRFAG50 • Low RDS(on) Power MOSFET Transistor In A Hermetic Metal TO3 Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at 1000V ±20V 5.6A 3.5A 22A 150W 1.2W/°C 860mJ 1.0V/ns -55 to +150°C -55 to +150°C Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C EAS dv/dt TJ Tstg Single Pulse Avalanche Energy Peak Diode Recovery (3) Junction Temperature Range Storage Temperature Range (2) THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.83 °C/W Max. Units INTERNAL PACKAGE INDUCTANCE Symbols Parameters Min. Typ. LD Internal Drain Inductance 5 LS Internal Source Inductance 13 nH Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 50V, L = 52 mH, Peak IL = 5.6A, Starting TJ = 25°C, RG = 25Ω (3) (4) @ ISD ≤ 5.6A, di/dt ≤ 120A/µs, VDD ≤ 600V, TJ ≤ 150°C, Suggested RG = 6.2Ω Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8699 Issue 1 Page 1 of 3 N-CHANNEL POWER MOSET IRFAG50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 250µA 1000 RDS(on) Static Drain-Source On-State Resistance VGS = 10V ID = 3.2A VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate-Source Leakage Reverse Gate-Source Leakage IGSS (4) Typ 2 2.0 Ω 4 V VDS ≥ 100 IDS = 3.2A VGS = 0 VDS = 0.8 × VDS(MAX) 250 TJ = 125°C 1000 5.2 Units V 1.7 (4) Max. 7.8 S(Ʊ) VGS = 20V 100 VGS = -20V -100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 2800 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1.0MHz 180 Qg Total Gate Charge VGS = 10V 130 200 Qgs Gate-Source Charge ID = 5.6A 13 20 Qgd Gate-Drain Charge VDS = 0.4 × VDS(MAX) 74 110 td(on) Turn-On Delay Time VDD = 500V 20 30 tr Rise Time 29 44 td(off) Turn-Off Delay Time 140 210 tf Fall Time 40 60 ID = 5.6A RG = 6.2Ω RD = 91Ω pF nC ns SOURCE-DRAIN DIODE CHARACTERISTICS IS Continuous Source Current 5.6 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IS = 5.6A Reverse Recovery Charge VDD ≤ 50V Qrr (1) A 22 IS = 5.6A TJ = 25°C VGS = 0 TJ = 25°C di/dt = 100A/µs Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] (4) 1.8 V 260 580 1200 ns 1.8 3.9 8.4 µC Website: http://www.semelab-tt.com Document Number 8699 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRFAG50 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) Pin 1 - Gate Pin 2 - Source Case - Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8699 Issue 1 Page 3 of 3