SAMWIN SW50N06A N-channel MOSFET Features TO-251 TO-252 BVDSS : 60V ID ■ High ruggedness ■ RDS(ON) (Max 0.023 Ω)@VGS=10V ■ Gate Charge (Typ 30nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 50A RDS(ON) : 0.023 ohm 1 2 1 2 3 3 2 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Order Codes Item 1 2 Sales Type SW I 50N06A SW D 50N06A Marking SW50N06A SW50N06A Package TO-251 TO-252 Packaging TUBE REEL Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed (note 1) VGS Gate to Source Voltage Value Unit 60 V 50 A 34 A 200 A ± 20 V EAS Single pulsed Avalanche Energy (note 2) 780 mJ EAR Repetitive Avalanche Energy (note 1) 13 mJ dv/dt Peak diode Recovery dv/dt (note 3) 7 V/ns 108 W 0.86 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to sink Rthja Thermal resistance, Junction to ambient Mar. 2011. Rev. 2.0 Value Min. Typ. Max. Unit 1.15 oC/W 50 oC/W 62.5 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. oC/W 1/7 SAMWIN SW50N06A Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 60 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.06 - V/oC - 1 uA Drain to source leakage current VDS=60V, VGS=0V - IDSS VDS=48V, TC=125oC - - 100 uA Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA 2.0 - 4.0 V 0.016 0.023 Ω 900 1220 430 550 90 IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 25A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 80 td(on) Turn on delay time 50 tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz 165 VDS=30V, ID=25A, RG=25Ω pF ns 78 Fall time 60 Qg Total gate charge 36 45 Qgs Gate-source charge 8.6 - Qgd Gate-drain charge 12 - Min. Typ. Max. Unit - - 50 A - - 200 A VDS=48V, VGS=10V, ID=50A nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=50A, VGS=0V - - 1.5 V Trr Reverse recovery time - 95 - ns Qrr Breakdown voltage temperature IS=50A, VGS=0V, dIF/dt=100A/us - 250 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 300uH, IAS = 50.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 50.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW50N06A Fig. 1. On-state characteristics Fig. 2. Transfer characteristics 3 10 2 10 8 7 6 5.5 5 Bottom 4.5 2 10 10 Id[ A ], Drain Current ID[ A ], Drain Current VGS[ V ] Top 15 1 10 ، طNote 1. 250§ ءPulse Test 2. TC = 25،ة -55[،]ة 1 10 ، طNote VDS = 30 [ V ] 250§ ءPulse Test 0 10 25[،]ة 125[،]ة 0 -1 0 10 10 1 10 2 10 4 VDS[V], Drain to Source Voltage 6 8 10 Vgs[ v ], Gate-Source Voltage Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 70 2 10 IDR[ A ], Reverse Drain Current Drain to Source on Resistance 60 RDS(ON)[m§]ظ 50 40 VGS=10[V] 30 20 1 10 VGS=20[V] ، طNote TJ = 25،ة 10 o Tj=25 C ، طNote VGS = 0V 250§ ءPulse Test 0 0 10 0 50 100 150 0.2 200 0.4 0.6 ID[ A ], Drain Current 2. COss = Cds + Cgd ، طNote 1. VGS = 0[V] Ciss 2. Frequency = 1[MHz] 1500 Crss 500 0 -1 10 VGS[ V ], Gate to Source Voltage[V] Coss 3. Crss = Cgd 1000 1.2 1.4 1.6 12 1. Ciss = Cgs + Cgd (Cds = shorted) 2000 1.0 Fig. 6. Gate charge characteristics 3000 2500 0.8 Vsd[ V ], Source-Drain Voltage Fig. 5. Capacitance characteristics (Non-Repetitive) Capcitance [ pF ] o Tj=175 C 10 VDS =12V VDS = 30V 8 VDS = 48V 6 4 ، طNote ID = 50A 2 0 0 10 1 10 VDS[ V ], Drain to Source Voltage 0 5 10 15 20 25 30 35 40 45 Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW50N06A Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 1.1 1.0 0.9 2.5 Rds(on),(Normalized) Drain-Source On-Resistance BVDSS[ V ], Breakdown Voltage 1.2 ، طNote 1. VGS= 0V 2.0 1.5 1.0 ، طNote 1. Vgs = 10V 2. Id = 25A 0.5 2. ID = 250§ث 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o Tj, Junction temperature[ C] Temperature [،]ة Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area Operating Area limited by RDS(ON) 2 ID[ A ], Drain Current 10 1ms 100us 10ms DC 1 10 Case Temp. @ 175،ة Junction Temp.@ 25،ة Single Pulse ، طSee Figure 11. 0 10 -1 0 10 1 10 2 10 10 VDS[ V ], Drain to source Voltage Z¥بJC(t), Thermal Impedance Fig. 11. Transient thermal response curve 0 10 PDM t1 t2 -1 10 <Note> 1. Z¥بJC(t) = 1.25،ة/W Max. 2. Duty Factor, D=t1/t2 3. Z¥بJC(t) = (TJM - TC)/PD -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1[ sec ], Square Wave Pulse Duration Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW50N06A Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW50N06A Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW50N06A REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7