SAMWIN SW740U N-channel TO-220 MOSFET Features TO-220 BVDSS : 400V : 10A ID ■ High ruggedness ■ RDS(ON) (Max 0.55Ω)@VGS=10V ■ Gate Charge (Typical 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested RDS(ON) : 0.55ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Order Codes Item 1 Sales Type SW P 740U Marking SW740 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol Parameter Drain to Source Voltage VDSS ID Continuous Drain Current (@TC =25oC) Continuous Drain Current (@TC =100oC) Value Unit 400 V 10* A 6.3* A 40 A ±30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 1200 mJ EAR Repetitive Avalanche Energy (note 1) 170 mJ (note 3) 5 V/ns 226 W 1.8 W/oC -55 ~ + 150 oC 300 oC dv/dt (note 1) Peak diode Recovery dv/dt Total power dissipation (@TC PD Derating Factor above TSTG, TJ =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. TL Thermal characteristics Symbol Value Unit Rthjc Thermal resistance, Junction to case Parameter 0.55 oC/W Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 58 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 1/5 SAMWIN SW740U Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 400 V V/oC 0.43 VDS=400V, VGS=0V 1 uA VDS=320V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.0 V 0.55 Ω On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 5A Forward Transconductance VDS=20V, ID =5 A Gfs 2.0 0.35 10 S Dynamic characteristics 1150 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 40 td(on) Turn on delay time 15 30 35 60 98 200 38 80 38 70 tr td(off) tf Qg Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz 170 VDS=200V, ID=10A, RG=25Ω (note 4,5) Fall time Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=320V, VGS=10V, ID=10A (note 4,5) pF ns nC 6 18 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=10A, VGS=0V Trr Reverse recovery time Qrr Reverse recovery Charge IS=10A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 10 A 40 A 1.5 V 270 ns 2.53 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 25.4mH, IAS = 10A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 2/5 SAMWIN Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown Voltage Variation vs. Junction Temperature SW740U Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 3/5 SAMWIN SW740U Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 2mA Charge nC Fig. 10. Switching time test circuit & waveform VDS RL RGS VDS VDD VIN 10VIN 90% DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. td(off) tf tOFF July. 2013. Rev. 3.0 4/5 SAMWIN SW740U Fig. 11. Unclamped Inductive switching test circuit & waveform Fig. 12. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0 5/5