SAMWIN SW30N06 N-channel MOSFET Features TO-220 TO-251 TO-252 BVDSS : 60V ID ■ High ruggedness ■ RDS(ON) (Max 0.036 Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 1 2 1 2 3 3 : 30A RDS(ON) : 0.036 ohm 2 3 2 1. Gate 2. Drain 3. Source 1 General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers 3 Order Codes Item 1 2 3 Sales Type SW P 30N06 SW I 30N06 SW D 30N06 Marking SW30N06 SW30N06 SW30N06 Package TO-220 TO-251 TO-252 Packaging TUBE TUBE REEL Absolute maximum ratings Symbol VDSS ID Parameter Value Unit Drain to Source Voltage 60 V Continuous Drain Current (@TC=25oC) 30 A 14 A 120 A Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Voltage ± 20 V EAS Single pulsed Avalanche Energy (note 2) 178 mJ EAR Repetitive Avalanche Energy (note 1) 4.0 mJ dv/dt Peak diode Recovery dv/dt (note 3) 7.0 V/ns 44 W 0.57 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL (note 1) Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Parameter Typ. Max. Unit 2.85 oC/W Thermal resistance, Case to Sink 50 oC/W Thermal resistance, Junction to ambient 110 oC/W Rthjc Thermal resistance, Junction to case Rthcs Rthja May. 2011. Rev. 3.0 Value Min. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW30N06 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 60 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.06 - V/oC - 1 uA Drain to source leakage current VDS=60V, VGS=0V - IDSS VDS=48V, TC=125oC - - 50 uA Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA 2.0 - 4.0 V 0.027 0.036 Ω 580 760 220 280 80 IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 15A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 60 td(on) Turn on delay time 9 tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz 65 VDS=30V, ID=15A, RG=25Ω pF ns 40 Fall time 37 Qg Total gate charge 20 26 Qgs Gate-source charge 5 - Qgd Gate-drain charge 10 - Min. Typ. Max. Unit - - 30 A - - 120 A VDS=48V, VGS=10V, ID=30A nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=30A, VGS=0V - - 1.4 V Trr Reverse recovery time - 44 - ns Qrr Breakdown voltage temperature IS=30A, VGS=0V, dIF/dt=100A/us - 62 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 360uH, IAS = 30.0A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW30N06 Fig. 1. On-state characteristics 2 10 Fig. 2. Transfer characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 1 o 10 175 C o 25 C o -55 C *. Notes : 1. 250us Pulse Test O 2. TC = 25 C *. Notes : 1. VDS =VGS 2. 250us Pulse Test 0 0 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 100 2 IDR, Reverse Drain Current[A] 80 VGS = 10V 60 VGS = 20V 40 20 1 10 O 175 C O 25 C *. Notes : 1. VGS = 0V O *. Note : TJ = 25 C 2. 250us Pulse Test 0 0 0 20 40 60 80 100 120 10 140 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage[V] Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics 12 1500 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd VGS, Gate-Source Voltage [V] 1000 *. Notes : 1. VGS = 0V Ciss 2. f=1MHz Coss 500 VDS = 48V 10 Crss=Cgd Capacitance [pF] RDS(ON), Drain-Source On-Resistance[m¥]ط 10 Crss VDS = 30V 8 6 4 2 *. Note : ID = 30.0 A 0 0 0 5 10 15 20 25 VDS, Drain-Source Voltage [V] 30 35 0 5 10 15 20 25 Qg, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW30N06 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 *. Notes : 1. VGS = 0 V 0.9 2. ID = 250 uA 2.5 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 *. Notes : 1. VGS = 10 V 0.5 2. ID = 15 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 3 10 35 Operation in This Area is Limited by R DS(on) 30 2 ID, Drain Current [A] ID' Drain Current [A] 10 25 20 15 10 100us 1 ms 10 ms 1 10 DC 0 *. Notes : o 1. TC = 25 C 10 5 o 2. TJ = 175 C 3. Single Pulse 0 25 50 75 100 125 150 -1 10 175 -1 0 10 o 1 10 TC' Case Temperature [ C] 10 2 10 VDS, Drain-Source Voltage [V] Fig. 11. Transient thermal response curve Z¥èJC(t), Thermal Response 0 10 D=0.5 0.2 *. Notes : O 1. Z¥èJC(t) = 1.78 C/W Max. 0.1 2. Duty Factor, D=t1/t2 0.05 -1 3. TJM - TC = PDM * Z¥èJC(t) 10 0.02 0.01 t1 single pulse t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW30N06 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW30N06 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW30N06 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ REV 3.0 Added TO-220 package spec Alice Nie 2011.05.05 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7