MPSA42 NPN Silicon General Purpose Transistors TO-92 1 1. EMITTER 2. BASE 3. COLLECTOR 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA TJ, Tstg Junction and Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=10V, IC=1mA 60 hFE(2) VCE=10V, IC=10mA 80 hFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V DC current gain fT Transition frequency VCE=20V, IC=10mA,f=30MHZ 250 50 MHz CLASSIFICATION OF hFE(2) Rank Range WEITRON http://www.weitron.com.tw A B1 B2 C 80-100 100-150 150-200 200-250 MPSA42 WEITRON http://www.weitron.com.tw MPSA42 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50