AON7401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7401/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7401 and AON7401L are electrically identical. -RoHS Compliant -AON7401L is Halogen Free VDS (V) = -30V (VGS = -10V) ID = -9A RDS(ON) < 14mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -4.5V) DFN 3x3 Top View Bottom View D S S S G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,G C TA=70°C B A V A 27 11 Junction and Storage Temperature Range 1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 1.6 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. ±25 -7 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D Units V -80 IDSM TA=25°C Power Dissipation Maximum -30 -9 TC=25°C Power Dissipation S -20 TA=25°C Continuous Drain Current G -20 ID IDM TC=100°C Pulsed Drain Current D D D D RθJA RθJC Typ 30 60 4 °C Max 40 75 4.5 Units °C/W °C/W °C/W www.aosmd.com AON7401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 TJ=55°C VGS=-10V, ID=-9A TJ=125°C Static Drain-Source On-Resistance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr -3 V 11 14 A 36 VDS=-5V, ID=-10A 27 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance -2.2 17 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.7 2060 VGS=0V, VDS=-15V, f=1MHz µA nA 28 VSD Units ±100 14 Forward Transconductance Coss -5 VGS=-4.5V, ID=-5A gFS IS Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ mΩ S -1 V -3 A 2600 pF 370 pF 295 pF Ω VGS=0V, VDS=0V, f=1MHz 2.4 3.6 30 39 VGS=-10V, VDS=-15V, ID=-9A 4.6 nC 10 nC VGS=-10V, VDS=-15V, RL=1.6Ω, RGEN=3Ω 11 ns 9.4 ns 24 ns 12 IF=-9A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/µs nC 14 ns 18 35 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating I DSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. Rev0: Jun 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 VDS=-5V -10V -6V -5V 60 -4.5V -ID(A) -ID (A) 60 40 40 -4V 125°C 20 20 VGS=-3.5V 25°C 0 0 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 45 1.6 VGS=-4.5V 35 RDS(ON) (mΩ) Normalized On-Resistance 40 30 25 20 `VGS=-10V 15 10 VGS=-10V ID=-9A 1.4 1.2 1 VGS=-4.5V ID=-5A 0.8 5 0 5 10 15 20 0.6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 10 150 ID=-9A 1 25 125°C 20 -IS (A) 0.1 RDS(ON) (mΩ) 50 125°C 15 25°C 0.01 0.001 0.0001 10 25°C 0.00001 5 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-9A 2500 Capacitance (pF) -VGS (Volts) 8 6 VDS=VGS ID=1mA 4 2000 500 0 0 5 10 15 20 25 1.4 50 Coss 1000 2 0 Ciss 1500 30 Crss 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 10µs 100µs 800 140 80 0.5 40 10 RDS(ON) limited 0.1 10ms 0.1s 1s 10s DC TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 1ms 1 1 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 25 30 220 140 TJ(Max)=150°C TA=25°C 15 7 30 20 0 0.001 100 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 20 10 0.01 0.1 15 -VDS (Volts) Figure 8: Capacitance Characteristics 50 100 1.8 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD NOT ASSUME ANY LIABILITY ARISING COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH Ton Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com