AOT3N60 2.5A, 600V N-Channel MOSFET formerly engineering part number AOT9602 General Description Features The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested! D Top View TO-220 G G S D S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain TC=25°C 2.5 B Current TC=100°C ID 1.6 Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Case-to-Sink Maximum Junction-to-Case D,F Alpha & Omega Semiconductor, Ltd. Units V V A IDM 8 IAR 2 A EAR 60 mJ EAS dv/dt 120 5 59.5 mJ V/ns W 0.48 -50 to 150 W/ C °C 300 °C PD TJ, TSTG TL Symbol RθJA RθCS RθJC o Typical 54 Maximum 65 Units - 0.5 1.2 2.1 °C/W °C/W °C/W www.aosmd.com AOT3N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature /∆TJ Coefficient IDSS Zero Gate Voltage Drain Current 700 ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V o VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance VSD IS Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time µA ±100 nA 4 5 V VGS=10V, ID=1.25A 2.9 3.5 VDS=40V, ID=1.25A 2.8 Ω S 1 V 2 A 8 A 3 0.64 DYNAMIC PARAMETERS Ciss Input Capacitance Crss V/ C 0.65 1 IGSS Output Capacitance V VDS=600V, VGS=0V VGS(th) Coss V VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=480V, ID=2A VGS=10V, VDS=300V, ID=2A, RG=25Ω 240 304 370 pF 25 31.4 38 pF 2.6 3.3 4 pF 2.3 2.9 4.5 Ω 9.9 12 nC 2.1 3 nC 4.6 6 nC 17 20 ns 17 20 ns 24 30 ns 16 20 ns ns µC trr Body Diode Reverse Recovery Time IF=2.5A,dI/dt=100A/µs,VDS=100V 175 210 Qrr Body Diode Reverse Recovery Charge IF=2.5A,dI/dt=100A/µs,VDS=100V 1.4 1.7 A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. L=60mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25°C 60 Rev 0. July 2008 100 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT3N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 10V -55°C VDS=40V 4 6.5V ID(A) ID (A) 3 6V 2 1 1 125°C 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 2.5 6.0 RDS(ON) (mΩ) 5.0 Normalized On-Resistance 5.5 VGS=10V 4.5 4.0 3.5 3.0 2.5 2 VGS=10V ID=1A 1.5 1 0.5 2.0 0 1 2 3 4 5 0 -100 6 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 60 IS (A) BVDSS (Normalized) 125°C 1.0E+00 1.1 1 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOT3N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=480V ID=2A Ciss Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss 100 10 3 0 1 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0.1 RDS(ON) limited 10µs 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 1ms 1 100µs 0.1 TJ(Max)=150°C TC=25°C 10ms 0.1s DC 0.01 1 10 100 1000 Current rating ID(A) 2.50 10 2.00 1.50 1.00 0.50 0.00 0 VDS (Volts) 10 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note B) Figure 9: Maximum Forward Biased Safe Operating Area for AOT3N60 (Note F) ZθJC Normalized Transient Thermal Resistance 1 3.00 100 ID (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=0.45°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT3N60 (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT3N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com