CHENMKO ENTERPRISE CO.,LTD CHTA14ZPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 1 Ampere APPLICATION * General purpose switching and amplification * Audio power amplifier FEATURE SC-73/SOT-223 Small flat package. (SC-73/SOT-223) Saturation voltage VCE(sat)=1.5V(max.)(IC/IB=100mA/0.1mA) PD= 2.0W (Power Dissipation). High saturation current capability. 1.65+0.15 6.50+0.20 0.90+0.05 CONSTRUCTION 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.9+0.2 2.0+0.3 * NPN Switching Transistor 7.0+0.3 3.00+0.10 3.5+0.2 * * * * 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-73/SOT-223 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 30 Volts Collector - Emitter Voltage Open Base VCEO - 30 Volts Emitter - Base Voltage Open Collector VEBO - 10 Volts IC - 1 Amps Collector Current DC O Thermal resistance junction - case point Rθ J-C - 62.5 Total Power Dissipation TA ≤ 25OC; Note 1 PTOT - 2000 Storage Temperature TSTG -55 +150 o C Junction Temperature TJ - +150 o C TAMB -55 +150 o C Operating Ambient Temperature C/W mW Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-01 RATING CHARACTERISTIC CURVES ( CHTA14Z ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=30V CONDITION ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=10V ICEO - - 0.1 uA DC Current Gain VCE=5V IC=0.01A IC=0.1A hFE 10000 20000 - - Collector-Emitter Saturation Voltage IC=100mA; IB=0.1mA VCEsat - - 1.5 Volts Base-Emitter oN Voltage IC=100mA; VCE=5V VBEon - - 2.0 Volts Collector Capacitance IE=ie=0; VCB=10V; f=1MHz CC - 4.0 - pF Transition Frequency IC=10mA; VCE=5V; f=100MHz fT 125 - - MHz RATING CHARACTERISTIC CURVES ( CHTA14ZPT ) Typical Electrical Characteristics Figure 1. CC - Reverse VCB Figure 2. hFE - IC 10 100000 DC CURRENT GAIN hFE COLLECTOR CAPACITANCE CC (pF) COMMON EMITTER V CE =5V 1 0.1 10000 1000 0.3 1.0 3.0 10 30 1 100 10 Figure 3. VCE(sat) - IC Figure 4. VBE(on) - IC 10 10 COMMON EMITTER V CE =5V COMMON EMITTER I C /I B =1000 ON VOLTAGE VBE(ON) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 100 COLLECTOR CURRENT I C (mA) COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V) 1 0.1 1 10 100 COLLECTOR CURRENT I C (mA) 1000 1 0.1 0.01 0.1 1 10 COLLECTOR CURRENT I C (mA) 100 1000