DCCOM BC847

DC COMPONENTS CO., LTD.
BC847
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film
circuits.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
2 = Emitter
3 = Collector
3
.063(1.60)
.055(1.40)
1
.108(0.65)
.089(0.25)
2
o
Absolute Maximum Ratings(TA=25
Characteristic
C)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
225
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.0043(0.11)
.0035(0.09)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
BVCBO
50
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
45
-
-
V
IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=1µA
ICBO
-
-
15
nA
VCB=30V
Collector Cutoff Current
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(sat)1
-
90
250
mV
IC=10mA, IB=0.5mA
VCE(sat)2
-
200
600
mV
IC=100mA, IB=5mA
VBE(sat)1
-
700
-
mV
IC=10mA, IB=0.5mA
VBE(sat)2
-
900
-
mV
IC=100mA, IB=5mA
VBE(on)1
580
-
700
mV
IC=2mA, VCE=5V
VBE(on)2
-
-
770
mV
IC=10mA, VCE=5V
hFE
110
-
800
-
IC=2mA, VCE=5V
(1)
DC Current Gain
Transition Frequency
fT
-
300
-
MHz
Output Capacitance
Cob
-
3.5
6
pF
(1)Pulse Test: Pulse Width
Test Conditions
IC=10µA
380µs, Duty Cycle
2%
Classification of hFE
Rank
A
B
C
Range
110~220
200~450
420~800
IC=10mA, VCE=5V
VCB=10V, f=1MHz, IE=0