HUASHAN HBTA6A60

Shantou Huashan Electronic Devices Co.,Ltd.
HBTA6A60
ＩＮＮＥＲ　ＩＮＳＵＬＡＴＥＤ　ＴＹＰＥ　ＴＲＩＡＣ　（ＩＩ　ＴＯ－２２０　ＰＡＣＫＡＧＥ）
█　Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=6A)
* High Commutation dv/dt
*Isolation Voltage（VISO =2500V AC）　█　General Description
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
█ Absolute Maximum Ratings（Ta=25℃）　T stg ——Storage Temperature………………………………………………………………… －40~150℃
T j ——Operating Junction Temperature …………………………………………………… －40~125℃　PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT （RMS）——R.M.S On-State Current（Tc=94℃）………………………………………………… 6A
VGM——Peak Gate Voltage…………………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………………………… 2.0A
ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) …………………… 60/66A
VISO ——RMS Isolation Breakdown Voltage……………………………………………………… 2500V
█ Electrical Characteristics （Ta=25℃）
Symbol
Items
Min
Max
Unit
Conditions
VD =VDRM,Single Phase,Half
IDRM
Repetitive Peak Off-State Current
1.0
mA
VTM
Peak On-State Voltage
1.6
V
I+GT1
Gate Trigger Current（Ⅰ）
10
mA
VD =6V, RL =10 ohm
I-GT1
Gate Trigger Current（Ⅱ）
10
mA
VD =6V, RL =10 ohm
I-GT3
Gate Trigger Current（Ⅲ）
10
mA
VD =6V, RL =10 ohm
V+GT1
Gate Trigger Voltage（Ⅰ）
1.5
V
VD =6V, RL =10 ohm
V-GT1
Gate Trigger Voltage（Ⅱ）
1.5
V
VD =6V, RL =10 ohm
V-GT3
Gate Trigger Voltage（Ⅲ）
1.5
V
VD =6V, RL =10 ohm
VGD
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Holding Current
0.2
V
T J=125℃,VD =1/2VDRM
5.0
V/µS
(dv/dt)c
IH
Rth(j-c)
Thermal Resistance
10
Wave, TJ=125℃
IT=8A, Inst. Measurement
T J=125℃,VD =2/3VDRM (di/dt)c=-3A/ms
mA
3.8
℃/W
Junction to case
Shantou Huashan Electronic Devices Co.,Ltd.
█　Performance Curves
HBTA6A60
Shantou Huashan Electronic Devices Co.,Ltd.
HBTA6A60