Shantou Huashan Electronic Devices Co.,Ltd. HTP12A60 NON INSULATED TYPE TRIAC (TO-220 PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-State Current(IT(RMS)=12A) * High Commutation dv/dt █ General Description The Triac HTP12A60 is suitable for wide range of applications, like copier, microwave oven, heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） Tstg——Storage Temperature………………………………………………………………… -40~125℃ Tj ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT（RMS）——R.M.S On-State Current（Ta=100℃）………………………………………………… 12A V G M ——Peak Gate Voltage………………………………………………………………… 10V IGM——Peak Gate Current…………………………………………………………… 2.0A ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)………… 119/130A █ Electrical Characteristics（Ta=25℃） Symbol IDRM Items Min. Typ. Repetitive Peak Off-State Current Max. Unit 2.0 mA Conditions VD=VDRM,Single Phase,Half VTM Peak On-State Voltage 1.4 V Wave, TJ=125℃ IT=20A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 30 mA VD=6V, RL=10 ohm I-GT1 Gate Trigger Current（Ⅱ） 30 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current（Ⅲ） 30 mA VD=6V, RL=10 ohm V+GT1 Gate Trigger Voltage（Ⅰ） 1.5 V VD=6V, RL=10 ohm V-GT1 Gate Trigger Voltage（Ⅱ） 1.5 V VD=6V, RL=10 ohm V-GT3 Gate Trigger Voltage（Ⅲ） 1.5 V VD=6V, RL=10 ohm VGD Non-Trigger Gate Voltage Critical Rate of Rise of Off-State Voltage at Commutation 0.2 V TJ=125℃,VD=1/2VDRM 10 V/µS TJ=125℃,VD=2/3VDRM (dv/dt)c (di/dt)c=-6A/ms IH Rth(j-c) Holding Current Thermal Resistance 20 mA 1.8 ℃/W Junction to case Shantou Huashan Electronic Devices Co.,Ltd. HTP12A60 █ Performance Curves Fig 1. Gate Characteristics Fig 2. On-state Current [A] 1 Gate Voltage (V) 10 0.1 On-State Voltage 101 102 Gate Current 103 (mA) On-state Voltage [V] Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃] RMS On-state current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature 100 RMS On-state Current [A] 101 Time（Cycles） 102 Shantou Huashan Electronic Devices Co.,Ltd. Fig 7. Gate Trigger Current vs. HTP12A60 Fig 8. Transient Thermal Impedance Impedance [℃/W ] Transient Thermal Junction Temperature 10-2 10-1 100 Time（sec） Junction Temperature [℃] Fig 9. Gate Trigger Characteristics Test Circuit 10Ω Test ProcedureⅠ 10Ω Test ProcedureⅡ 10Ω Test ProcedureⅢ 101 102