ISC 2N6322

Inchange Semiconductor
Product Specification
2N6322
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current and high power capability
·Low collector saturation voltage
APPLICATIONS
·For use in high current ,high
power applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
30
A
IB
Base current
10
A
PD
Total Power Dissipation
200
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6322
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdwon voltage
IC=30mA ;IB=0
200
V
V(BR)CBO
Collector-base breakdwon voltage
IC=2m A ;IE=0
300
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=2m A ;IC=0
5
V
VCEsat-1
Collector-emitter saturation voltage
IC=20A ;IB=2A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=30A; IB=6A
3.0
V
VBE
Base-emitter on voltage
IC=30A ; VCE=5V
2.5
V
ICEO
Collector cut-off current
VCE=100V; IB=0
2.0
mA
ICES
Collector cut-off current
VCE=300V; VBE=0
20
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
20
μA
hFE-1
DC current gain
IC=5A ; VCE=5V
40
hFE-2
DC current gain
IC=20A ; VCE=5V
12
hFE-3
DC current gain
IC=30A ; VCE=5V
6
Transition frequency
IC=1A ; VCE=10V
10
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
150
MHz
Inchange Semiconductor
Product Specification
2N6322
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3