ISC 2SC3212A

Inchange Semiconductor
Product Specification
2SC3212 2SC3212A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-3PFa package
・Low collector saturation voltage
・High VCBO
・High speed switching
APPLICATIONS
・For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC3212
VCBO
Collector-base voltage
VALUE
UNIT
800
Open emitter
2SC3212A
V
900
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
500
V
8
V
IC
Collector current
7
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
PC
Collector power dissipation
TC=25℃
100
Ta=25℃
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC3212 2SC3212A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
100
μA
100
μA
2SC3212
ICBO
Collector
cut-off current
2SC3212A
CONDITIONS
MIN
MAX
500
UNIT
V
VCB=800V; IE=0
VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
8
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
TYP.
3.5
MHz
Switching times
ton
tstg
tf
2SC3212
1.0
2SC3212A
1.2
μs
Turn-on time
IC=5A; VCC=200V
IB1=-IB2=1A
Storage time
2.5
2SC3212
1.0
2SC3212A
1.2
μs
μs
Fall time
2
Inchange Semiconductor
Product Specification
2SC3212 2SC3212A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3