Inchange Semiconductor Product Specification 2SB548 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD414 APPLICATIONS ・Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO VCEO VEBO IC PARAMETER N A H INC Emitter-base voltage Open emitter Open base Open collector Collector current (DC) Ta=25℃ PD D N O IC M E S GE Collector-base voltage Collector-emitter voltage CONDITIONS VALUE UNIT -100 V -80 V -5 V -0.8 A 1.0 Total power dissipation W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB548 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-0.2A ; VCE=-5V COB Output capacitance IE=0; VCB=-10V;f=1MHz Transition frequency IC=-0.1A ; VCE=-5V fT 体 半导 CONDITIONS 固电 IN 2 TYP. 40 MAX UNIT 320 R O T UC OND IC M E ES G N A CH MIN 25 pF 70 MHz Inchange Semiconductor Product Specification 2SB548 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3