Inchange Semiconductor Product Specification 2SC2690 2SC2690A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1220/1220A APPLICATIONS ・For use in audio and radio frequency power amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC2690 VCBO Collector-base voltage 120 Open base 2SC2690A VEBO Emitter-base voltage V 160 2SC2690 Collector-emitter voltage UNIT 120 Open emitter 2SC2690A VCEO VALUE 160 Open collector V V 5 V IC Collector current 1.2 A ICM Collector current-Peak 2.5 A IB Base current 0.3 A PD Total power dissipation Ta=25℃ 1.2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SC2690 2SC2690A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=1A; IB=0.2A 0.7 V Base-emitter saturation voltage IC=1A ;IB=0.2A 1.3 V ICBO Collector cut-off current VCB=120V; IE=0 1 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=5mA ; VCE=5V 35 hFE-2 DC current gain IC=0.3A ; VCE=5V 60 Cob Output capacitance IE=0 ; VCB=10V f=1MHz 19 pF fT Transition frequency IC=0.2A ; VCE=5V 155 MHz CONDITIONS hFE-2 Classifications R Q P 60-120 100-200 160-320 2 MIN TYP. 320 Inchange Semiconductor Product Specification 2SC2690 2SC2690A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC2690 2SC2690A Silicon NPN Power Transistors 4