ISC 2SB954A

Inchange Semiconductor
Product Specification
2SB954 2SB954A
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・High forward current transfer ratio hFE
which has satisfactory linearity
・Low collector saturation voltage
APPLICATIONS
・For power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
导体
半
电
固
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEO
VEBO
Collector-base voltage
CONDITIONS
EMIC
GE S
2SB954
VCBO
N
A
H
INC
Open emitter
2SB954A
2SB954
Collector-emitter voltage
Emitter-base voltage
OND
R
O
T
UC
VALUE
UNIT
-60
V
-80
-60
Open base
2SB954A
V
-80
Open collector
-5
V
IC
Collector current
-1
A
ICM
Collector current-peak
-2
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
1
Inchange Semiconductor
Product Specification
2SB954 2SB954A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
voltage
VCEO
VCEsat
CONDITIONS
2SB954
MIN
TYP.
MAX
UNIT
-60
IC=-30mA ;IB=0
2SB954A
V
-80
Collector-emitter saturation voltage
IC=-1.0A ;IB=-0.125A
-1.0
V
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
-1.3
V
ICEO
Collector
cut-off current
-300
μA
-200
μA
-1
mA
Collector
cut-off current
ICES
2SB954
VCE=-30V; IB=0
2SB954A
VCE=-60V; IB=0
2SB954
VCE=-60V; VBE=0
2SB954A
VCE=-80V; VBE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=-0.2A ; VCE=-4V
DC current gain
IC=-1A ; VCE=-4V
Transition frequency
IC=-0.2A; VCE=-5V,f=10MHz
hFE-2
fT
‹
体
半导
固电
ton
Trun-on time
ts
Storage time
tf
Fall time
IC=-1A ;VCC=-50V
IB1=-0.1A, IB2=0.1A
hFE-1 Classifications
Q
P
70-150
120-250
R
O
T
UC
70
D
N
O
IC
M
E
S
GE
N
A
H
C
IN
VEB=-5V; IC=0
2
250
15
30
MHz
0.5
μs
1.2
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SB954 2SB954A
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SB954 2SB954A
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4