ISC 2SB941A

Inchange Semiconductor
Product Specification
2SB941 2SB941A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・Low collector saturation voltage
・Complementary to type 2SD1266/1266A
APPLICATIONS
・For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
导体
半
电
R
O
T
UC
Absolute maximum ratings(Ta=25℃)
固
SYMBOL
VCBO
PARAMETER
CONDITIONS
D
N
O
IC
2SB941
M
E
S
GE
Collector-base voltage
Open emitter
2SB941A
VCEO
VEBO
N
A
H
INC
Collector-emitter voltage
Emitter-base voltage
2SB941
VALUE
-60
Open collector
V
-80
-60
Open base
2SB941A
UNIT
V
-80
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB941 2SB941A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
voltage
VCEO
VCEsat
CONDITIONS
2SB941
MIN
TYP.
MAX
UNIT
-60
IC=-30mA ,IB=0
V
2SB941A
-80
Collector-emitter saturation voltage
IC=-3A, IB=-0.375A
-1.2
V
VBE
Base-emitter voltage
IC=-3A ; VCE=-4V
-1.8
V
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
ICEO
Collector
cut-off current
-0.3
mA
-0.2
mA
Collector
cut-off current
ICES
hFE-1
hFE-2
fT
VCE=-30V; IB=0
2SB941A
VCE=-60V; IB=0
2SB941
VCE=-60V; VBE=0
2SB941A
VCE=-80V; VBE=0
体
半导
DC current gain
IC=-1A ; VCE=-4V
DC current gain
IC=-3A ; VCE=-4V
Transition frequency
IC=0.5A; VCE=-10V,f=10MHz
固电
Switching times
Turn-on time
tstg
Storage time
tf
IC=-1A
IB1=-0.1A ,IB2=0.1A
Fall time
hFE-1 Classifications
Q
P
70-150
120-250
R
O
T
UC
70
D
N
O
IC
M
E
S
GE
N
A
H
INC
ton
‹
2SB941
2
250
10
30
MHz
0.5
μs
1.2
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SB941 2SB941A
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SB941,2SB941A
Silicon PNP Power Transistors
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4