ISC 2SD1263A

Inchange Semiconductor
Product Specification
2SD1263 2SD1263A
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220Fa package
·High breakdown voltalge
APPLICATIONS
·For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SD1263
VCBO
Collector-base voltage
250
Open base
2SD1263A
VEBO
Emitter-base voltage
V
400
2SD1263
Collector-emitter voltage
UNIT
350
Open emitter
2SD1263A
VCEO
VALUE
V
300
Open collector
5
V
IC
Collector current
0.75
A
ICM
Collector current-peak
1.5
A
PC
Collector power dissipation
Ta=25℃
2
TC=25℃
35
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1263 2SD1263A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
Collector-emitter
voltage
CONDITIONS
2SD1263
MIN
TYP.
MAX
UNIT
250
IC=30mA ,IB=0
V
300
2SD1263A
Collector-emitter saturation voltage
IC=1A, IB=0.2A
1.0
V
VBE
Base-emitter voltage
IC=1A ; VCE=10V
1.5
V
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
Collector
cut-off current
2SD1263
VCE=150V; IB=0
1.0
mA
ICEO
2SD1263A
VCE=200V; IB=0
1.0
mA
2SD1263
VCE=350V; VBE=0
1.0
mA
2SD1263A
VCE=400V; VBE=0
1.0
mA
ICES
Collector
cut-off current
hFE-1
DC current gain
IC=0.3A ; VCE=10V
70
hFE-2
DC current gain
IC=1A ; VCE=10V
10
Transition frequency
IC=0.5A; VCE=5V,f=10MHz
fT
250
30
MHz
0.5
μs
2
μs
0.5
μs
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A;IB1=-IB2=0.1A
VCC=50V
hFE-1 Classifications
Q
P
70-150
120-250
2
Inchange Semiconductor
Product Specification
2SD1263 2SD1263A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SD1263 2SD1263A
Silicon NPN Power Transistors
4