Inchange Semiconductor Product Specification 2SC2238 2SC2238A 2SC2238B Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA968 ・High breakdown votage APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC2238 VCBO VCEO EMIC S E G N A H C IN Collector-base voltage Collector-emitter voltage 2SC2238A Open emitter Emitter-base voltage VALUE 180 200 2SC2238 160 2SC2238A Open base UNIT 160 2SC2238B 2SC2238B VEBO R O T UC OND CONDITIONS 180 V V 200 Open collector 5 V IC Collector current 1.5 A IE Emitter current -1.5 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2238 V(BR)CEO Collector-emitter breakdown voltage 2SC2238A MAX UNIT IC=10mA; IB=0 V 180 200 Emitter-base breakdown voltage IE=1mA; IC=0 Collector-emitter saturation voltage IC=500A; IB=50mA 1.5 V VBE Base-emitter on voltage IC=500mA ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=160V ;IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA VCEsat hFE TYP. 160 2SC2238B V(BR)EBO MIN 导体 半 电 固 DC current gain Cob Output capacitance fT Transition frequency IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V hFE Classifications Y 70-140 120-240 V R O T UC D N O IC IC=100mA ; VCE=5V M E S GE N A H INC O 5 2 70 240 25 pF 100 MHz Inchange Semiconductor Product Specification 2SC2238 2SC2238A 2SC2238B Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3