isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3449 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE w w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT 800 V 500 V Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3449 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current μA hFE-1 DC Current Gain hFE-2 DC Current Gain m e s isc 10 fT COB B VEB= 5V; IC= 0 w. w w Current-Gain—Bandwidth Product Output Capacitance B IC= 0.6A; VCE= 5V IC= 3A; VCE= 5V n c . i 15 50 8 IC= 0.6A; VCE= 10V 18 MHz IE= 0; VCB= 10V; ftest= 1.0MHz 80 pF Switching Times ton Turn-on Time tstg Storage Time tf IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 50Ω; VCC= 200V Fall Time hFE-1 Classifications L M N 15-30 20-40 30-50 isc Website：www.iscsemi.cn 2 0.5 μs 3.0 μs 0.3 μs