isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4162 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A PC Collector Power Dissipation @TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4162 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 4.5A; IB1= 0.45A, IB2= -1.8A, L= 500μH, clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.6A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.6A 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1.6A; VCE= 5V 15 hFE-2 DC Current Gain IC= 8A; VCE= 5V 10 hFE-3 DC Current Gain IC= 10mA; VCE= 5V 10 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 120 pF Current-Gain—Bandwidth Product IC= 1.6A; VCE= 10V 20 MHz fT B B 50 Switching Times ton Turn-On Time tstg Storage Time tf IC= 7A; IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6Ω Fall Time hFE-1 Classifications L M N 15-30 20-40 30-50 isc Website：www.iscsemi.cn 2 0.5 μs 2.5 μs 0.3 μs