ISC 2SC4251

isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
2SC4251
DESCRIPTION
·High fTfT = 1100 MHz TYP.
·Low Output CapacitanceCOB = 0.9 pF TYP.
APPLICATIONS
·Designed for TV tuner ,VHF oscillator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
50
mA
IB
Base Current-Continuous
25
mA
PC
Collector Power Dissipation
@TC=25℃
0.1
W
TJ
Junction Temperature
125
℃
-55~125
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
2SC4251
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0
μA
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
15
DC Current Gain
IC= 8mA ; VCE= 3V
40
Current-Gain—Bandwidth Product
IC= 8mA;VCE= 10V
650
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
rbb’ • CC
Base Time Constant
IC= 8mA ; VCB= 10V;f= 30MHz
V(BR)CEO
hFE
fT
isc Website:www.iscsemi.cn
2
V
200
1100
MHz
0.9
1.3
pF
7
12
ps
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
isc RF Product Specification
2SC4251
isc RF Product Specification
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc Website:www.iscsemi.cn
2SC4251
4