isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4743 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s i . w 1500 V 800 V 6 V Collector Current- Continuous 6 A IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ IC Tstg n c . i m e UNIT w w Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 500 μA hFE DC Current Gain m e s isc tf CONDITIONS . w w w isc Website：www.iscsemi.cn 2 MAX UNIT V 6 V B n c . i ICP= 5A , IB1= 1A; fH= 31.5kHz TYP. 800 B IC= 1A ; VCE= 5V Fall Time MIN 15 30 0.4 μs isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4743 s c s i . w n c . i m e w w isc Website：www.iscsemi.cn