isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1163 DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter BreakdownVoltage: V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IC(surge) Collector Current-Surge 20 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1163 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 5 mA hFE DC Current Gain IC= 5A ; VCE= 5V Fall Time ICP= 3.5A; IB1= 0.45A 0.5 μs tf isc Website：www.iscsemi.cn CONDITIONS MIN MAX UNIT 120 V 6 V B B 2 TYP. 25