Inchange Semiconductor Product Specification 2SC5895 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High speed switching ・Low collector saturation voltage APPLICATIONS ・Power supply for audio and visual equipments such as TVs and VCRs ・Industrial equipments such as DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector 3 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.1 simplified outline (TO-220F) and symbol Emitter Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-peak 4 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5895 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 0.5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.25 A V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 ICBO Collector cut-off current VCB=60V; IE=0 100 μA ICEO Collector cut-off current VCE=60V; IB=0 100 μA hFE-1 DC current gain IC=0.2A ; VCE=4V 60 hFE-2 DC current gain IC=1A ; VCE=4V 80 hFE-3 DC current gain IC=2A ; VCE=4V 30 Transition frequency IC=0.1A ; VCB=10V;f=10MHz fT 60 V 250 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH 100 MHz 0.2 μs 0.7 μs 0.15 μs Switching times ton tstg tf Turn-on time Storage time IC=1A;IB1=-IB2=0.1A VCC=50V Fall time 2 Inchange Semiconductor Product Specification 2SC5895 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions 3