ISC 2SC1444

Inchange Semiconductor
Product Specification
2SC1444
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
60
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
IB
Base current
1
A
PD
Total power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1444
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA ;IB=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=6A; IB=1A
1.5
V
VBE
Base-emitter on voltage
IC=6A ; VCE=4V
2.0
V
ICBO
Collector cut-off current
VCB=80V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=4V
30
hFE-2
DC current gain
IC=3A ; VCE=4V
15
Transition frequency
IC=0.5A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
10
MAX
UNIT
MHz
Inchange Semiconductor
Product Specification
2SC1444
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3