ISC 2SD1840

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD1840
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB1230
APPLICATIONS
·Designed for motor drivers, converters and other general
high-current switching applications.
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ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
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VALUE
UNIT
110
V
100
V
6
V
IC
Collector Current-Continuous
15
A
ICP
Collector Current-Pulse
25
A
IB
Base Current-Continuous
5
A
Collector Power Dissipation
@ Ta=25℃
3
B
W
PC
TJ
Tstg
Collector Power Dissipation
@ TC=25℃
100
Junction Temperature
150
℃
-55~150
℃
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD1840
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
‹
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
110
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
0.8
V
VBE(sat)
Base -Emitter Saturation Voltage
IC= 6A; IB= 0.6A
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
100
μA
IEBO
Emitter Cutoff Current
100
μA
hFE-1
DC Current Gain
hFE-2
DC Current Gain
hFE-1 Classifications
P
Q
50-100
70-140
B
B
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isc Website:www.iscsemi.cn
MIN
VEB= 5V; IC= 0
IC= 1.5A; VCE= 2V
50
IC= 6A; VCE= 2V
20
2
TYP.
MAX
140
UNIT