ISC 2SD1911

Inchange Semiconductor
Product Specification
2SD1911
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in TV horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1911
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A , IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A ; IB=1.2A
5.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ; IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
50
200
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
25
VF
Diode forward voltage
IF=5A
600
V
2.0
2
UNIT
V
Inchange Semiconductor
Product Specification
2SD1911
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3