Inchange Semiconductor Product Specification 2SD1553 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 600 V Emitter-base voltage Open collector 5 V 2.5 A A H C IN IC Collector current IB Base current 1 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1553 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS Emitter-base breakdown voltage IE=200mA , IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A VBEsat Base-emitter saturation voltage ICBO hFE fT COB VF tf MIN TYP. MAX 5 UNIT V 8.0 V IC=2A; IB=0.6A 1.5 V Collector cut-off current VCB=500V; IE=0 10 μA DC current gain IC=0.5A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V 体 导 半 Collector output capacitance 固电 3 MHz TOR C U D ON C I M E SE G N A CH IN 8 IE=0 ; VCB=10V;f=1MHz Diode forward voltage Fall time 5.0 IF=2.5A ICP=2A ;IB1(end)=0.6A 2 95 pF 1.6 2.0 V 0.5 1.0 μs Inchange Semiconductor Product Specification 2SD1553 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 R O T UC